芯片可靠性驗證RA：HTOLHASTHTSL

高溫老化壽命試驗(HTOL)

參考標準：JESD22-A108；

測試條件：

For devices containing NVM, endurance preconditioning must be performed before HTOL per Q100-005.

Grade 0: +150℃ Ta for 1000 hours.

Grade 1: +125℃ Ta for 1000 hours.

Grade 2: +105℃ Ta for 1000 hours.

Grade 3: + 85℃ Ta for 1000 hours.

Vcc (max) at which dc and ac parametric are guaranteed. Thermal shut-down shall not occur during this test.

TEST before and after HTOL at room, hot, and cold temperature.

高加速應力試驗(HAST)

參考標準：JESD22-A110；

測試條件：

Plastic Packaged Parts

Grade 0: +175℃ for 1000 hours or +150℃ for 2000 hours.

Grade 1: +150℃ for 1000 hours or +175℃ for 500 hours.

Grades 2 to 3: +125℃ for 1000 hours or +150℃ for 500 hours.

Ceramic Packaged Parts

+250℃ for 10 hours or +200℃ for 72 hours.

TEST before and after HTSL at room and hot temperature.

* NOTE: Data from Test B3 (EDR) can be substituted for Test A6 (HTSL) if package and grade level requirements are met.

高溫存儲試驗(HTSL)

參考標準：JESD22-A103 ；

測試條件：

Plastic Packaged Parts

Grade 0: +175℃ for 1000 hours or +150℃ for 2000 hours.

Grade 1: +150℃ for 1000 hours or +175℃ for 500 hours.

Grade 2 to 3: +125℃ for 1000 hours or +150℃ for 500 hours.

Ceramic Packaged Parts

+250℃ for 10 hours or +200℃ for 72 hours.

TEST before and after HTSL at room and hot temperature.

* NOTE: Data from Test B3 (EDR) can be substituted for Test A6 (HTSL) if package and grade level requirements are met.

芯片可靠性驗證 ( RA)：

芯片級預處理(PC) & MSL試驗 、J-STD-020 & JESD22-A113 ；

高溫存儲試驗(HTSL), JESD22-A103 ；

溫度循環(huán)試驗(TC), JESD22-A104 ；

溫濕度試驗(TH / THB), JESD22-A101 ；

高加速應力試驗(HTSL / HAST), JESD22-A110；

高溫老化壽命試驗(HTOL), JESD22-A108；